напряжение затвор-сток
-
Обозначение
UЗС
UGD
[ГОСТ 19095-73]
Англо-русский словарь нормативно-технической терминологии. academic.ru. 2015.
Drain Induced Barrier Lowering — As channel length decreases, the barrier φB to be surmounted by an electron from the source on its way to the drain reduces Drain induced barrier lowering or DIBL is a secondary effect in MOSFETs referring originally to a reduction of threshold… … Wikipedia
Voltage multiplier — Villard cascade voltage multiplier. A voltage multiplier is an electrical circuit that converts AC electrical power from a lower voltage to a higher DC voltage, typically by means of a network of capacitors and diodes. Voltage multipliers can be… … Wikipedia
Voltage doubler — A voltage doubler is an electronic circuit which charges capacitors from the input voltage and switches these charges in such a way that, in the ideal case, exactly twice the voltage is produced at the output as at its input. The simplest of… … Wikipedia
Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… … Wikipedia
gate — I. noun Etymology: Middle English, from Old English geat; akin to Old Norse gat opening Date: before 12th century 1. an opening in a wall or fence 2. a city or castle entrance often with defensive structures (as towers) 3. a. the frame or door… … New Collegiate Dictionary
Common gate — Figure 1: Basic N channel common gate circuit (neglecting biasing details); current source ID represents an active load; signal is applied at node Vin and output is taken from node Vout; output can be current or voltage In electronics, a common… … Wikipedia
Threshold voltage — The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The creation of this layer is described next … Wikipedia
Insulated-gate bipolar transistor — The insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device, noted for high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, variable speed refrigerators, air… … Wikipedia
Open drain — is one of the many different electrical input/output standards in digital designs today. Definition The word drain in the term Open drain refers to the drain terminal of a MOSFET transistor. (The analogous term for BJT devices is open collector.) … Wikipedia
Transmission gate — A transmission gate is an electronic element. It is a good non mechanical relay, built with CMOS technology. Sometimes known as an analog gate, analogue switch or electronic relay depending on its use. It is made by the parallel combination of an … Wikipedia
Common drain — In electronics, a common drain amplifier, also known as a source follower, is one of three basic single stage field effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit the gate terminal of the… … Wikipedia
